Infineon Technologies AG has introduced its next-generation CoolSiC 1200 V G2 MOSFETs in a top-side-cooled (TSC) Q-DPAK package. Designed to meet the rigorous demands of high-performance industrial applications, the new devices offer significant advancements in thermal management, efficiency, and power density. Key applications include EV chargers, solar inverters, uninterruptible power supplies (UPS), motor drives, and solid-state circuit breakers.
The G2 MOSFETs deliver up to 25% lower switching losses compared to their G1 predecessors, enabling up to a 0.1% boost in overall system efficiency. Leveraging Infineon’s advanced .XT interconnection technology, the new devices achieve more than 15% lower thermal resistance and reduce device temperatures by up to 11%. With a wide RDS(on) range from 4 mΩ to 78 mΩ, the portfolio provides engineers with the flexibility to tailor performance to specific application needs.
Built for durability, the G2 technology supports overload operation at junction temperatures up to 200°C and offers high immunity to parasitic turn-on. This ensures reliable performance even under extreme switching conditions.
The new CoolSiC 1200 V G2 devices are offered in two Q-DPAK TSC variants: a single switch and a dual half-bridge configuration. Both options are part of Infineon’s scalable X-DPAK platform, which maintains a uniform 2.3 mm package height across TSC offerings, including Q-DPAK and TOLT. This consistent form factor allows customers to mix and match products under a single heatsink assembly, streamlining the development of compact, high-efficiency power systems.
The Q-DPAK package enhances thermal performance by enabling direct heat dissipation from the device’s top surface to the heatsink. This direct thermal path delivers significantly better heat transfer efficiency compared to traditional bottom-side cooled packages, enabling more compact designs. Additionally, the Q-DPAK package layout design allows for minimized parasitic inductance, which is critical for higher switching speeds. This enhances system efficiency and reduces voltage overshoot risk. The small footprint of the package supports compact system designs, while its compatibility with automated assembly processes simplifies manufacturing, ensuring cost-efficiency and scalability.
Availability
The CoolSiC MOSFET 1200 V G2 in Q-DPAK single switch and dual half-bridge package variants are available now.
